A key component needed for the National Spherical Torus Experiment–Upgrade (NSTX-U), the flagship fusion facility currently under repair at the Department of Energy’s Princeton Plasma Physics Laboratory (PPPL), has been delivered to the lab’s New Jersey campus.

According to the Department of Energy’s Princeton Plasma Physics Laboratory, recent simulations and analysis demonstrate that the design of its flagship fusion facility, the National Spherical Torus Experiment Upgrade (NSTX-U), which is currently under repair, could serve as a model for an economically attractive next-generation fusion pilot plant.

CMOS sensors such as this could be made more tolerant to ionizing radiation. Photo: NASA/Wikimedia Commons

High-energy radiation can be detrimental to electronic equipment, necessitating the use of radiation-hardened and -resistant electronics in nuclear energy, decommissioning, and space exploration. The online newsletter Tech Xplore reports on a radiation-hardened and repairable integrated circuit being fabricated by researchers at Peking University, Shanghai Tech University, and the Chinese Academy of Sciences.

The radiation-immune and repairable circuits developed by the researchers are based on field-effect transistors (FET) that use a semiconducting carbon nanotube transistor as a channel, an ion gel as its gate, and a substrate made of polyimide. According to the article, the FETs have a radiation tolerance of up to 15 Mrad, which is notably higher than the 1 Mrad tolerance of silicon-based transistors. The FETs are also capable of being recovered by annealing at moderate temperatures (100 °C for 10 minutes).